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NTD4809NH, NVD4809NH
Power MOSFET
30 V, 58 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC ? Q101 Qualified and PPAP Capable ? NVD4809NH
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
9.0 m W @ 10 V
12.5 m W @ 4.5 V
D
I D MAX
58 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
G
N ? Channel
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
" 20
V
V
S
Continuous Drain
Current (R q JA ) (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
11.5
9.0
A
4
4
Drain
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note 2)
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Pulsed Drain Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
P D
I D
P D
I D
P D
I DM
2.0
9.0
7.0
1.3
58
45
52
130
W
A
W
A
W
A
1 2
3
DPAK 3 IPAK
CASE 369AA CASE 369AD
(Bent Lead) (Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Current Limited by Package
T A = 25 ° C
I DmaxPkg
45
A
Operating Junction and Storage Temperature
T J , T stg
? 55 to
175
° C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 15 A, R G = 25 W )
I S
dV/dt
E AS
43
6.0
112.5
A
V/ns
mJ
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y = Year
WW = Work Week
4809NH= Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 9
1
Publication Order Number:
NTD4809NH/D
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NTD4810NH-1G 功能描述:MOSFET N-CH 30V 8.6A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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